Resistive RAM

Resistive RAM is a special type of non-volatile random access memory (NVRAM). RAM is a primary memory and being considered an important part of every computer system. It bears some resemblance to phase change memory (PCM) in its working. The Resistive RAM works by changing the resistance between solid materials. This material need to be dielectric. The Resistive RAM is a very new and developing type of RAM. It is currently in developmental stage and many companies are trying to work with its developments. It is anticipated to be the replacement of the flash memory which is widely used today. There have been many kind of RAM technologies like DRAM, SRAM and so on.

Applications of Resistive RAM

Resistive RAM is seen as a new evolving technology which can have many benefits in several fields. It operates at a very faster time-scale. It also has smaller and lucid structure compared to other kind of RAM types. Hence it can be the best type of RAM to be used in cell phones, computer devices, handheld devices and so on. Resistive RAM has already entered into the commercial space on experimental basis. More researches and experiments must be carried out to determine the actual working of this RAM technology. With the new array of devices coming on the market, this newly advent RAM technology could be perfect for meeting their requirements.

Material Systems for Resistive memory cells

Multiple organic and inorganic material systems display thermal or ionic resistive switching effects. These can be grouped into the following categories:

  • Phase-change chalcogenides
  • Binary transition metal oxides
  • Perovskites
  • Solid-state electrolytes
  • Organic charge-transfer complexes
  • Organic donor-acceptor systems

Future Applications

Resistive RAM operates at a very faster timescale (switching time can be less than 10 ns), while compared to MRAM, it has a simpler, smaller cell structure (less than 8F² MIM stack). A vertical one diode, one resistive switching device (1D1R) integration can be used for crossbar memory structure to reduce the unit cell size to 4F² (F is the feature dimension). Compared to flash memory and racetrack memory, a lower voltage is sufficient, and hence it can also be used in low-power applications. Due to its relatively small access latency and high density, RRAM is also considered a promising candidate for designing cache memories.

2 Comments

  1. inec8inx9mi@gmail.com' Lucka says:

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  2. myrtisrobinette@freenet.de' Cazare says:

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